Giant room-temperature modulation of magnetic anisotropy by electric fields in CoFeB/(011)-PMN-PT multiferroic heterostructures with two distinct initial magnetic anisotropies

This paper reports that the in situ growth magnetic field (Hg) during magnetic-phase CoFeB deposition impacts the electric-field control of magnetic anisotropy in Co40Fe40B20/(011)-Pb(Mg1/3Nb2/3)0.7Ti0.3O3 [CoFeB/(011)-PMN-PT] composite multiferroic heterostructures at room temperature. In the Hg1 mode (in situ Hg along the [011¯] direction of the ferroelectric PMN-PT substrate), the electric-field-controlled modulation ratios of the magnetic coercivity HC and saturation magnetic field HS are approximately −47% and +156%, respectively. However, in the Hg2 mode (in situ Hg along the [100] direction of the ferroelectric PMN-PT substrate) of the CoFeB/(011)-PMN-PT multiferroic heterostructure, the electric-field-controlled modulation ratios of the magnetic coercivity HC and saturation magnetic field HS can reach as high as +162% and +393%, respectively. Moreover, the electric-field-controlled magnetic coercive field HC exhibits a butterfly shape when plotted versus the applied electric fields in both modes, which matches the in-plane butterfly strain loop of the ferroelectric PMN-PT substrate. However, the electric-field-controlled saturation magnetic field HS presents a square loop, which is very consistent with the ferroelectric loop of the PMN-PT substrate. This result may be ascribed to the distinct pathway of the ferroelastic domain switching in the (011)-oriented PMN-PT substrate. This study provides a new idea for the design of spintronic devices based on multiferroic heterostructures.