电子线路
场效应晶体管
肖特基势垒
CMOS芯片
晶体管
兴奋剂
材料科学
光电子学
纳米技术
氧化物
半导体
过渡金属
集成电路
电气工程
化学
电压
工程类
生物化学
二极管
冶金
催化作用
作者
Jun Cai,Zheng Sun,Peng Wu,Rahul Tripathi,Hao-Yu Lan,Jing Kong,Zhihong Chen,Joerg Appenzeller
出处
期刊:Nano Letters
[American Chemical Society]
日期:2023-11-17
卷期号:23 (23): 10939-10945
被引量:1
标识
DOI:10.1021/acs.nanolett.3c03184
摘要
Two-dimensional (2D) materials hold great promise for future complementary metal-oxide semiconductor (CMOS) technology. However, the lack of effective methods to tune the Schottky barrier poses a challenge in constructing high-performance complementary circuits from the same material. Here, we reveal that the polarity of pristine MoTe2 field-effect transistors (FETs) with minimized air exposure is n-type, irrespective of the metal contact type. The fabricated n-FETs with palladium contact can reach electron currents up to 275 μA/μm at VDS = 2 V. For p-FETs, we introduce a novel nitric oxide doping strategy, allowing a controlled transition of MoTe2 FETs from n-type to unipolar p-type. By doping only in the contact region, we demonstrate hole currents up to 170 μA/μm at VDS= −2 V with preserved Ion/Ioff ratios of 105. Finally, we present a complementary inverter circuit comprising the high-performance n- and p-type FETs based on MoTe2, promoting the application of 2D materials in future electronic systems.
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