Fabrication of GaN Nanowires by a Gas Reaction Method

Under a non-space confinement condition,GaN nanowires with diameters of about 10-50nm were synthesized on LaAlO 3 substrates by using a simple gas reaction method.The structural properties of GaN nanowries were characterized by means of X-ray powder diffraction(XRD),field-emitting scanning electron microscopy (FE-SEM),high-resolution transmission electron microscopy (HRTEM)and selected area electron diffraction (SAED).SEM images showed that the straight nanowires with smooth surface were obtained.XRD,SAED and HRTEM indicated that the nanowires were wurtzite GaN crystals.