比较器
CMOS芯片
放大器
电气工程
电子线路
噪音(视频)
功率(物理)
电子工程
计算机科学
物理
工程类
量子力学
图像(数学)
人工智能
电压
作者
Vishal Jain,Shubham Tayal,Parveen Singla,Vikas Mittal,Swati Gupta,J. Ajayan
出处
期刊:International Conference on Communication and Electronics Systems
日期:2021-07-08
卷期号:35: 250-254
被引量:2
标识
DOI:10.1109/icces51350.2021.9488992
摘要
This research work intensively studied the impact of thermal effects on the logic performance of dynamic comparators implemented using 16 nm strained silicon/metal gate/high-K CMOS technology and with a power supply (V DD ) of 0.7 V. The double tail latch type and pre-amplifier and latch type dynamic CMOS comparators exhibited a delay of 45.03 pS and 63.09 pS respectively. Moreover, the double tail latch type and pre-amplifier and latch type comparators consumed a power of 69.16 µW and 58.76 µW respectively. In order to investigate the thermal effects in dynamic CMOS comparators the operating temperature is varied from 30°C to 110°C and the pre-amplifier and regenerative latch type dynamic comparator is found to be exhibiting minimal noise compared with traditional double tail comparators. These two dynamic comparators implemented using 16 nm CMOS technology with a V DD of 0.7 V are considered to be promising circuits for future ultra low power and high speed ADCs.
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