材料科学
结晶度
碘化物
卤化物
钙钛矿(结构)
磁滞
晶界
薄膜晶体管
电子迁移率
晶体管
粒度
锡
光电子学
金属
化学工程
纳米技术
无机化学
图层(电子)
复合材料
凝聚态物理
冶金
微观结构
电气工程
电压
化学
工程类
物理
作者
Ji‐Young Go,Huihui Zhu,Youjin Reo,Hyun-Jun Kim,Guoxia Liu,Yong‐Young Noh
标识
DOI:10.1021/acsami.1c19368
摘要
Two-dimensional metal halide perovskites (2D MHPs) are promising candidates for transistor channel materials because of their high mobility in the lateral direction; however, Sn-based 2D MHPs exhibit poor film quality and oxidation stability. Here, we report a simple method to improve the performance and stability of 2D MHP transistors by incorporating sodium iodide (NaI) additives. By adding 1 vol % NaI (Na1), the transistors with phenethylammonium tin iodide (PEA2SnI4) exhibited reduced dual-sweep hysteresis, robust bias stability, and larger hole mobility (2.13 cm2 V-1 s-1) than that of a pristine device (0.39 cm2 V-1 s-1). Improvements in the film quality, such as increased grain size, crystallinity, and better film coverage, were observed in the PEA2SnI4:NaI film. In addition, NaI effectively passivated the iodine vacancies at the grain boundaries, thereby suppressing the defects.
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