非阻塞I/O
结晶度
材料科学
微晶
兴奋剂
分析化学(期刊)
电阻率和电导率
矿物学
冶金
复合材料
化学
光电子学
电气工程
工程类
生物化学
催化作用
色谱法
作者
S.C. Chen,T.Y. Kuo,Yi Lin,Hung-Yin Lin
标识
DOI:10.1016/j.tsf.2011.01.058
摘要
The NiO–Cu composite films with various Cu contents of 0–18.17 at.% are deposited on a glass substrate. An ultra high electrical resistivity (ρ) is obtained and cannot be detected by a four point probe measurement when the Cu content in the films is lower than 6.97 at.%. The ρ value is reduced significantly to 35.8 Ω-cm as Cu content is increased to 9.18 at.%, and it further decreases to 0.02 Ω-cm when the Cu content further increases to 18.17 at.%. The Hall measurement for all Cu-doped NiO films shows p-type conduction. In addition, the transmittance of NiO films also decreases continuously from 96% to 43% as Cu content increases from 0 to 18.17 at.%. The XRD patterns of Cu-doped NiO films show that only NiO peaks appear and the crystallinity of NiO films degrades as Cu content exceeds 6.97 at.%. A large amount of lattice sites of Ni2+ ions in a NiO crystallite is replaced by the Cu+ ions that lead to p-type conduction and result in the degradation of crystallinity for NiO–Cu composite films that have a higher Cu content.
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