波纹度
材料科学
GSM演进的增强数据速率
表面光洁度
蚀刻(微加工)
屈曲
直线(几何图形)
压力(语言学)
光学
失真(音乐)
复合材料
几何学
光电子学
物理
数学
图层(电子)
电信
哲学
CMOS芯片
语言学
放大器
计算机科学
作者
Naoyuki Kofuji,Nobuyuki Negishi,Hiroaki Ishimura,Toshiaki Nishida,Hitoshi Kobayashi
标识
DOI:10.7567/jjap.53.03de01
摘要
To clarify whether pattern waviness due to line-edge-roughness enhances wiggling, distortion of straight and wavy patterns was numerically analyzed by the three-dimensional (3D) elastic finite element method. Wiggling occurs only in wavy patterns but not in straight patterns at a stress or aspect ratio much lower than their buckling thresholds. More severe wiggling occurs when the wavelength of initial waviness approaches a value that is 3.3 times the pattern height. These phenomena were experimentally confirmed in the etching of amorphous carbon with a SiON mask. We consider that precise etching without wiggling is achieved by the elimination of the original line-edge roughness and the reduction in mechanical stress in an underlying film to which the pattern is transferred.
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