流利
硅
单晶硅
材料科学
晶体生长
Crystal(编程语言)
结晶
机械
机械工程
计算流体力学
偏转(物理)
湍流
计算机模拟
传热
旋转对称性
计算机科学
热力学
光电子学
光学
工程类
物理
程序设计语言
标识
DOI:10.1016/j.jcrysgro.2013.02.005
摘要
Silicon crystals for high efficiency solar cells are produced mainly by the Czochralski (CZ) crystal growth method. Computer simulations of the CZ process established themselves as a basic tool for optimization of the growth process which allows to reduce production costs keeping high quality of the crystalline material. The author shows the application of the general Computational Fluid Dynamics (CFD) code ANSYS FLUENT to solution of the static two-dimensional (2D) axisymmetric global model of the small industrial furnace for growing of silicon crystals with a diameter of 100 mm. The presented numerical model is self-sufficient and incorporates the most important physical phenomena of the CZ growth process including latent heat generation during crystallization, crystal–melt interface deflection, turbulent heat and mass transport, oxygen transport, etc. The demonstrated approach allows to find the heater power for the specified pulling rate of the crystal but the obtained power values are smaller than those found in the literature for the studied furnace. However, the described approach is successfully verified with the respect to the heater power by its application for the numerical simulations of the real CZ pullers by “Bosch Solar Energy AG”.
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