Analytical Approach to Model and Diagnostic Distribution of Dopant in an Implanted-Heterojunction Rectifier Accounting for Mechanical Stress

We calculate spatiotemporal distributions of dopant in an implanted-heterojunction rectifier. We analyzed the influence of inhomogeneity of heterostructure on dopant distribution. The influence of radiation processing of materials of the heterostructure, which has been done during ion implantation, on properties of the heterostructure has been also analyzed. It has been shown that radiation processing of materials of heterostructure leads to a decrease in mechanical stress in heterostructure. Our calculations have been done by using analytical approach, which gives us the possibility to obtain all results without joining solutions on all interfaces of heterostructure.