比较器
逐次逼近ADC
CMOS芯片
栏(排版)
图像传感器
帧(网络)
帧速率
功率(物理)
计算机科学
电压
物理
电子工程
电气工程
工程类
电信
人工智能
量子力学
作者
Martijn F. Snoeij,Paul Donegan,Albert Theuwissen,Kofi A. A. Makinwa,Johan H. Huijsing
出处
期刊:International Solid-State Circuits Conference
日期:2007-02-01
被引量:47
标识
DOI:10.1109/isscc.2007.373516
摘要
A CMOS image sensor uses a column-level ADC with a multiple-ramp single-slope (MRSS) architecture. This architecture has a 3.3times shorter conversion time than classic single-slope architecture with equal power. Like the single-slope ADC, the MRSS ADC requires a single comparator per column, and, additionally, 8 switches and some digital circuitry. A prototype in a 0.25 μm CMOS process has a frame rate 2.8times that of a single-slope ADC while dissipating 24% more power.
科研通智能强力驱动
Strongly Powered by AbleSci AI