Packaging for SiC power device

The wide band gap nature of SiC semiconductor makes high voltage power device possible to operate at high temperature. The high temperature operation of power device is expected to realize simplification of cooling system and miniaturizing the system size with smaller heat sink and/or less liquid cooling system. However, conventional plastic packaging for Si power device is designed to operate lower than 150 °C, which cannot be used for high temperature operation of SiC power device. Then, this paper develops the ceramic packaging for SiC power device to operate at extremely high temperature. The reliability of the developed ceramic package for long term high temperature exposure test and repetitive heat shock test results are introduced in the paper.