Cation Source Dependence of Ga0.5In0.5P Growth Rate by Low-Pressure Metalorganic Chemical Vapor Deposition

The Ga 0.5 In 0.5 P epilayer was grown by low-pressure metalorganic chemical vapor deposition. Trimethylgallium and triethylgallium were used as the gallium sources, while trimethylindium and ethyldimethylindium were used as the indium sources. The use of triethylgallium incorporated with trimethylindium enhanced the growth rate of Ga 0.5 In 0.5 P as compared to incorporation with ethyldimethylindium. While the use of trimethylgallium incorporated with ethyldimethylindium enhanced the growth rate of Ga 0.5 In 0.5 P significantly, as compared to incorporation with trimethylindium.