Construction of Dual‐tight Contact Interface in Z‐scheme System of In2O3/OV/In2S3 for Enhancing Photocatalytic Performance

Abstract The novel Z‐scheme photocatalytic system of In 2 O 3 /O V /In 2 S 3 has been obtained by a facile two‐step in situ deposition method, where oxygen vacancies and In 2 S 3 are in situ located on the surface of In 2 O 3 in sequence. In such a photocatalytic system, oxygen vacancy anchored tightly on the surface of In 2 O 3 serves as an electron mediator, efficiently extracting electrons from In 2 O 3 and modulating the electron transfer paths to facilize constructing a Z‐scheme system. Due to the presence of another tight contact interface between the In 2 O 3 and In 2 S 3 , the transfer rate of electrons from In 2 O 3 to In 2 S 3 can be further accelerated. Therefore, the synergistic effect of the above‐mentioned dual‐tight contact interface over In 2 O 3 /O V /In 2 S 3 Z‐scheme system simultaneously enhances the charge separation and transfer, resulting in the high performance of photocatalytic H 2 evolution.