硅
薄脆饼
材料科学
Crystal(编程语言)
电阻率和电导率
半导体
直拉法
分析化学(期刊)
光电子学
化学
电气工程
计算机科学
色谱法
工程类
程序设计语言
作者
Kinji Hoshi,Nobuyuki Isawa,Toshihiko Suzuki,Yasunori Ohkubo
出处
期刊:Journal of The Electrochemical Society
[The Electrochemical Society]
日期:1985-03-01
卷期号:132 (3): 693-700
被引量:68
摘要
Turbulent convection in silicon melts used in the Czochralski crystal‐growth method was found to be effectively suppressed by applying a transverse magnetic field over 2000G. When turbulent convection is suppressed, it was found that the oxygen concentration in the resulting silicon crystals could be precisely controlled within a range of . The oxygen concentration distribution in the crystals is more uniform than that obtained by the conventional Czochralski method. As‐grown n‐type silicon crystals with a resistivity as high as 5000 Ω‐cm were obtained. Resistivity distribution along the radius of the crystals is more uniform than that produced by the floating zone method. Silicon crystals with low oxygen concentration prepared by the present method have few thermal‐induced defects, which cause the degradation of generation lifetime. The characteristics and yield of p‐i‐n photodiodes and planar‐type GTO's are superior to that obtained in wafers prepared by the floating zone method. We conclude that the Czochralski method using a transverse magnetic field is an effective method of producing high quality silicon crystals which can improve the characteristics of semiconductor devices and their production yield.
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