通过硅通孔
可靠性(半导体)
体积热力学
半导体器件制造
硅
制作
过程(计算)
制造工艺
计算机科学
计量学
材料科学
可靠性工程
制造工程
工艺工程
纳米技术
薄脆饼
工程类
光电子学
物理
操作系统
病理
复合材料
功率(物理)
统计
医学
量子力学
替代医学
数学
作者
J. Gambino,Shawn A. Adderly,John Knickerbocker
标识
DOI:10.1016/j.mee.2014.10.019
摘要
The idea of using through-silicon-via (TSV) technology has been around for many years. However, this technology has only recently been introduced into high volume manufacturing. This paper gives a comprehensive summary of the TSV fabrication steps, including etch, insulation, and metallization. Along with the backside processing, assembly, metrology, design, packaging, reliability, testing and yield challenges that arise with the use of TSVs. Benefits and drawbacks for using each approach to manufacture TSVs are discussed including via-first, via-middle, and the via-last process. Several applications for TSVs are discussed including memory arrays and image sensors.
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