Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model

Silicon oxidation of heavily phosphorus-doped substrates is simulated based on the interfacial silicon emission model. We assume that double negatively charged vacancies (V 2- ) from the substrates reduce the interfacial silicon emission, which governs the oxidation rate at the interface. The simulation is done by reducing the rate of Si-atom emission according to the concentration of V 2- estimated from the carrier concentration of the substrates. In addition, the equilibrium concentration of oxygen in the oxide is increased with increasing P concentration to fit the experimental oxide thickness.