Proposal of an Ultracompact CMOS-Compatible TE-/TM-Pass Polarizer Based on SoI Platform

An all-dielectric transverse electric (TE)-/transverse magnetic (TM)-pass polarizer based on silicon-on-insulator (SoI) is proposed and analyzed. The symmetric etching of the silicon nanowire with specific values allows the cutoff of the undesired polarization state while the other is propagated with minimal losses. The proposed SoI polarizer can achieve 26- and 30-dB extinction ratios and 0.4-dB insertion losses for both TE- and TM-pass polarizers, respectively, with a very compact device length as short as 2.5 μm. The polarizer maintains <;1-dB insertion loss and >20-dB extinction ratio over a wide wavelength range of 1.454-1.68 μm. Fabrication of the introduced device is compatible with standard CMOS fabrication process.