From regular arrays of liquid metal nano-islands to single crystalline biatomic-layer gallium film: Molecular dynamics and first principle study

石墨烯 材料科学 异质结 纳米技术 单层 费米能级 纳米- 上部结构 凝聚态物理 化学物理 分子动力学 图层(电子) 光电子学 复合材料 化学 计算化学 地质学 电子 物理 冶金 海洋学 量子力学
作者
Xin Zhang,Haojie Zhang,Zewen Zong,Zhan Li,Ximeng Chen
出处
期刊:Journal of Applied Physics [American Institute of Physics]
卷期号:130 (12)
标识
DOI:10.1063/5.0063858
摘要

The two-dimensional (2D) materials provide an excellent platform for the study of the dimensional effect. The richer the types of 2D materials, the broader the unknown field we can explore. However, among the large number of 2D materials manufactured by humans, true single-crystalline (SC) atomically thin 2D metals are rare. The instability of SC 2D metal materials puts high demands on its fabrication process. By implementing molecular dynamics (MD) simulations, we proved that the SC biatomic-layer (BL) gallium film can be formed at the interface between two graphene layers. The Ga atoms deposited on the surface of the graphene on the copper substrate will spontaneously evolve into independent liquid nano-islands, and then cover the nano-island with a monolayer graphene. When the Ga nano-islands confined under the graphene layer are heated to 500 °C, they will expand into a BL Ga film, and finally, the entire system is cooled to room temperature to obtain the SCBL Ga film. It is found that these nano-islands are in the liquid state at ∼400 °C, but they undergo a phase transition and evolve into the solid state at ∼500°C. At the same time, the nano-islands also drop from 3D to 2D. In addition, the vertical heterostructure with moiré superstructure is formed between the SCBL Ga and the top layer graphene. The calculations of the electronic properties show that the Dirac conical point of the graphene in the heterostructure is shifted below the Fermi level, which proves that SCBL Ga is able to induce semimetallic to metallic conversion in graphene, indicating SCBL Ga can be used for metal contacts in 2D devices.
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