Cryogenic Performance of Vertical III-V Nanowire Gate-All-Around Ferroelectric FETs

This work investigates the cryogenic performance of InAs-based vertical nanowire ferroelectric field-effect transistors (VNW-FeFETs) with hafnium zirconium oxide (HZO) as the ferroelectric gate dielectric. Measurements at 300 K and 14 K reveal a 25% increase in memory window, from 560 mV at room temperature to 700 mV at 14 K, indicating enhanced polarization stability at low temperatures while also observing an improvement in the subthreshold swing. These results highlight the potential of VNW-FeFETs as scalable non-volatile memory elements for cryogenic computing applications.