拓扑绝缘体
凝聚态物理
量子反常霍尔效应
反铁磁性
拓扑(电路)
分子束外延
铁磁性
表面状态
宏观量子现象
物理
量子
材料科学
量子霍尔效应
磁场
纳米技术
曲面(拓扑)
外延
量子力学
图层(电子)
几何学
数学
组合数学
作者
Yan Gong,Jingwen Guo,Jiaheng Li,Kejing Zhu,Menghan Liao,Xiaozhi Liu,Qinghua Zhang,Lin Gu,Lin Tang,Xiao Feng,Ding Zhang,Wei Li,Can‐Li Song,Lili Wang,Pu Yu,Xi Chen,Yayu Wang,Hong Yao,Wenhui Duan,Yong Xu
标识
DOI:10.1088/0256-307x/36/7/076801
摘要
Intrinsic magnetic topological insulator (TI) is a stoichiometric magnetic compound possessing both inherent magnetic order and topological electronic states. Such a material can provide a shortcut to various novel topological quantum effects but remains elusive experimentally so far. Here, we report the experimental realization of high-quality thin films of an intrinsic magnetic TI---MnBi$_2$Te$_4$---by alternate growth of a Bi$_2$Te$_3$ quintuple-layer and a MnTe bilayer with molecular beam epitaxy. The material shows the archetypical Dirac surface states in angle-resolved photoemission spectroscopy and is demonstrated to be an antiferromagnetic topological insulator with ferromagnetic surfaces by magnetic and transport measurements as well as first-principles calculations. The unique magnetic and topological electronic structures and their interplays enable the material to embody rich quantum phases such as quantum anomalous Hall insulators and axion insulators in a well-controlled way.
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