Fabrication of UV detector by Schottky Pd/ZnO/Si Contacts

High performance UV Schottky photodiodes fabricated by ZnO thin film on Si substrate using sol-gel method have been studied. The Photodiode prepared in this study has a structure of Metal/ZnO/n-Si. The current-voltage (I-V) characteristics of the as-fabricated Schottky photodiodes show an excellent room temperature contrast ratio of ~7325.38 and responsivity of ~71.68 A/W at a reverse bias voltage of -4V, when the device was illuminated by an UV source of ~600 μW output power at ~360 nm. Measurements of contrast ratio and responsivity were made at room temperature, the obtained values are believed to be superior compared to those reported in literature.