材料科学
薄膜晶体管
无定形固体
晶体管
光电子学
电极
压力(语言学)
图层(电子)
电压
复合材料
电气工程
结晶学
化学
工程类
哲学
物理化学
语言学
作者
Po‐Yung Liao,Ting‐Chang Chang,Yu‐Jia Chen,Wan-Ching Su,Bo‐Wei Chen,Lihui Chen,Tien‐Yu Hsieh,Chung‐Yi Yang,Kuan‐Chang Chang,Shengdong Zhang,Yen-Yu Huang,Hsi‐Ming Chang,Shin‐Chuan Chiang
摘要
In this letter, the effects of hot carriers on amorphous In-Ga-Zn-O thin film transistors (TFTs) of different geometric structures were investigated. Three types of via-contact structure TFTs are used in this experiment, defined as source-drain large (SD large), source-drain normal (SD normal), and fork-shaped. After hot-carrier stress, the I-V curves of both SD normal and fork-shaped TFTs with U-shaped drains show a threshold voltage shift along with the parasitic transistor characteristic in the reverse-operation mode. Asymmetrical degradation is exhibited in an ISE-TCAD simulation of the electric field, which shows the distribution of hot electrons injected into the etch-stop layer below the redundant drain electrode.
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