Disk-like large grain poly-si is formed using solution-based MIC (metal-induced crystallization).A Ni gettering treatment technique is adopted to improve the poly-Si material quality.Using this poly-Si material as the active layer,the leakage and uniformity characteristics of TFTs are improved.Additionally,the pixel circuit and their layout of the two TFTs are demonstrated.Adopting a 6-mask process similar to that of the normal a-si TFT AMLCD product line,125mm QVGA poly-si TFT active matrix panels for OLED are fabricated.A 125mm QVGA AMOLED panel,which can display color video image,is implemented using the active matrix panel.