纤锌矿晶体结构
分子束外延
晶格常数
合金
材料科学
量子阱
格子(音乐)
外延
凝聚态物理
分析化学(期刊)
分子物理学
化学
光电子学
衍射
光学
纳米技术
锌
物理
声学
复合材料
冶金
色谱法
激光器
图层(电子)
作者
Brandon Dzuba,Trang Nguyen,Amrita Sen,Rosa E. Diaz,Megha Dubey,Mukesh Bachhav,Janelle P. Wharry,Michael J. Manfra,Oana Malis
摘要
Growth of wurtzite ScxAl1−xN (x < 0.23) by plasma-assisted molecular-beam epitaxy on c-plane GaN at high temperatures significantly alters the extracted lattice constants of the material due to defects likely associated with remnant phases. In contrast, ScAlN grown below a composition-dependent threshold temperature exhibits uniform alloy distribution, reduced defect density, and atomic-step surface morphology. The c-plane lattice constant of this low-temperature ScAlN varies with composition as expected from previous theoretical calculations and can be used to reliably estimate alloy composition. Moreover, lattice-matched Sc0.18Al0.82N/GaN multi-quantum wells grown under these conditions display strong and narrow near-infrared intersubband absorption lines that confirm advantageous optical and electronic properties.
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