2.1 kV (001)- β -Ga2O3 vertical Schottky barrier diode with high-k oxide field plate

We report a vertical β-Ga2O3 Schottky barrier diode (SBD) with BaTiO3 as field plate oxide on a low doped thick epitaxial layer exhibiting 2.1 kV breakdown voltage. A thick drift layer of 11 μm with a low effective doping concentration of 8 × 1015 cm–3 is used to achieve high breakdown voltage. Using the high-k dielectric with a dielectric constant of 248, the breakdown voltage increases from 816 V for the non-field-plated SBD to 2152 V (>2× improvement) for the field-plated SBD without compromising the on-state performance. The diode dimensions are varied to analyze the effect of edge high-field related leakage with reverse bias and also the effect of current spreading during forward operation. Very uniform distribution of breakdown voltages of 2152 ± 20 V are observed for the diode diameters from 50 to 300 μm for the field-plated SBDs. The on and off state power losses are also analyzed and compared with the non-field-plated devices and the switching losses are estimated analytically.