高电子迁移率晶体管
太赫兹辐射
光电子学
探测器
外差(诗歌)
响应度
材料科学
放大器
带宽(计算)
阻抗匹配
外差探测
光学
灵敏度(控制系统)
电阻抗
物理
晶体管
电信
电子工程
声学
电压
激光器
工程类
CMOS芯片
量子力学
作者
Qingfeng Ding,Yifan Zhu,Lanyong Xiang,Jinfeng Zhang,Xinxing Li,Lin Jin,Yang Shangguan,Jiandong Sun,Hua Qin
标识
DOI:10.35848/1882-0786/acb4de
摘要
Abstract In this paper, a 330 GHz terahertz heterodyne detector based on bowtie-antenna-coupled AlGaN/GaN high-electron-mobility transistor (HEMT) is designed and demonstrated. The bowtie antenna and a silicon lens couple the terahertz wave into a transmission line, in which the HEMT's channel generates both self-mixing and heterodyne signals. Compared to field-effect detectors without front low-noise amplifiers and output impedance matching, this detector boosts the intermediate-frequency (IF) bandwidth to 2.9 GHz due to a low output impedance of 505 Ω while maintaining a comparable sensitivity. With further sensitivity enhancement, such detectors would be developed into room-temperature, high-sensitivity, and high-IF-bandwidth heterodyne arrays.
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