Recent advances in heterostructure-based organic field-effect transistor memory

, as fast as 1 μs) and can operate at low voltages (typically below 10 V). However, heterostructure-based OFETMs face significant stability challenges that critically impact their performance and practical use. Given that stability is a key performance metric for OFETMs, researchers are actively working to enhance the reliability of heterojunction-based memory devices. Consequently, a diverse range of heterostructures has been developed-including organic-inorganic heterostructures, inorganic-inorganic hybrids, and organic-organic heterostructures-each demonstrating significant potential across various applications. This review discusses the research process of OFETMs utilizing organic heterojunctions, emphasizing the fundamental physical mechanisms and key performance parameters that contribute to their exceptional capabilities.