记忆电阻器
卤化物
钙钛矿(结构)
光电子学
材料科学
计算机科学
化学
电气工程
工程类
无机化学
结晶学
作者
Xiaohan Zhang,Yue Wang,Xiaoning Zhao,Zhongqiang Wang,Xuanyu Shan,Haiyang Xu,Yichun Liu
出处
期刊:
日期:2024-09-04
卷期号:1 (3): 265-281
被引量:19
摘要
Abstract Halide perovskites are considered as promising memristive materials for next‐generation optoelectronic devices. This review concisely summarizes the recent development of halide perovskite memristors and highlights their advancements in optoelectronic applications: light‐induced low power switches, optoelectronic logic operations, optoelectronic neuromorphic computation, and artificial vision systems. Finally, we address the challenges and future development prospects of halide perovskites‐based memristors. This review highlights the promising potential of halide perovskite materials for future optoelectronic memory and computing applications.
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