光电探测器
响应度
光电子学
光电导性
光电二极管
材料科学
量子效率
异质结
光伏系统
光学
光刻胶
紫外线
响应时间
光电效应
探测器
辐照度
比探测率
暗电流
量子阱
光探测
作者
Shuren Zhou,Lin Chen,Yan An,Hong Zhang,Yan Tang,Di Pang,Honglin Li,Lijuan Ye,Yi‐He Yu,Wanjun Li
出处
期刊:Optics Letters
[Optica Publishing Group]
日期:2025-12-10
卷期号:51 (1): 221-221
被引量:1
摘要
Solar-blind ultraviolet photodetectors based on β-Ga2O3 are attractive for both military and civilian applications, yet photoconductors suffer from slow response and photovoltaic photodiodes suffer from limited responsivity. Herein, we report a voltage-tunable graphene/β-Ga2O3 heterojunction photodetector with dual-mode operation. Under reverse bias, it functions as a photodiode with 150 mA/W responsivity, 71% external quantum efficiency (EQE), and 0.5 ms response time at 254 nm. Forward bias switches it to photoconductive mode, achieving 71 A/W responsivity and EQE above 35,000% with 60 ms response time. This bias-selectable behavior integrates high-speed and high-gain operation in one device, enabling advanced communication and imaging applications.
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