单层
电子迁移率
材料科学
带隙
光电子学
直接和间接带隙
半导体
异质结
石墨烯
衰减系数
吸收(声学)
纳米技术
光学
物理
复合材料
作者
Wei Shangguan,Cuixia Yan,Jinming Cai
标识
DOI:10.1016/j.apsusc.2022.154644
摘要
Tunable electronic structure, high carrier mobility and high optical absorption coefficient are three key properties for the application of two-dimensional (2D) semiconductors in nanoelectronic and optoelectronic devices. Based on first-principles calculations, we have designed a novel 2D quasi-planar material, Be2C monolayer, which contains tetracoordiante carbon structure formed by the metal bonding between carbon and four surrounding beryllium atoms. The monolayer Be2C has a wide indirect band gap of 2.33 eV (calculated by HSE06 functional), which can be regulated into a direct band gap by applying strain and changing the number of Be2C layers, leading to a change of the band gap from 0 to 2.62 eV. In addition, the monolayer Be2C has ultra-high electron mobility of 1.44 × 104 cm2V-1s−1 and light absorption coefficient of 1.12 × 106 cm−1, which are comparable to graphene and perovskite materials in solar cell. These excellent properties provide a very bright prospect for the monolayer Be2C in the applications of microelectronic and optoelectronic devices.
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