A Silicon-Based Crossbar Ultra-High-Density Non-Volatile Memory

The ever-increasing demand of non-volatile memory will lead to pursuit of terabit density (10 12 bits per cm 2 ) that is likely beyond the capability of current technology.This project seeks to develop ultra-highdensity, non-volatile memories using a crossbar structure, in which the memory components are two-terminal hysteretic resistive switches formed by two arrays of metal wires crossing each other and sandwiching a storage medium. Unlike previous attempts based on molecules that suffer from issues such as low yield, slow switching speed, and low on/off ratio, a silicon-based, fully CMOS compatible crossbar memory was achieved using nanoscale two-terminal hysteretic resistance switches. The prototype single-cell devices show scaling potential beyond 50 x50nm 2