Complementary Two-Dimensional (2-D) FET Technology With MoS2/hBN/Graphene Stack

This letter demonstrates a complementary 2-D field-effect transistor (FET) technology with molybdenum disulfide (MoS ₂ ) as the active film, hexagonal boron nitride (hBN) as the gate dielectric, and graphene as the gate electrode. The active region of the n-channel (n-FET) and p-channel (p-FET) devices are formed by undoped and Nb-doped MoS ₂ , respectively. The complementary FETs have the desirable threshold voltage polarity, similar current drive, and high on-off current ratios of more than 10 ⁶ . A complementary metal-oxide-semiconductor (CMOS) inverter has been fabricated and the measured gain is about 14 with 90% noise margin at a 2 V power supply.