Compact Plasmonic Enhanced MoTe2 Photodetector based on Engineering Gain-Bandwidth-Product Scaling Laws

Owing to the transition metal dichalcogenides strong light-matter interaction and distinctive materials properties. But low carrier mobilities limited the performance of the device. Here we demonstrate an efficient plasmonic slot photodetector based on integrating MoTe2 in silicon photonics. Narrowing the source-drain distance to tens of nm enables high gain-bandwidth-product detectors.