Room temperature synthesis of transition metal silicide-conducting polymer micro-composites for thermoelectric applications

材料科学 热电效应 热电材料 塞贝克系数 硅化物 复合材料 气凝胶 复合数 聚合物 化学工程 热导率 热力学 物理 工程类 图层(电子)
作者
Ujwala Ail,Zia Ullah Khan,Hjalmar Granberg,Fredrik Berthold,Rajasekar Parasuraman,Arun M Urnarji,Kerstin Slettengren,Henrik Pettersson,Xavier Crispin
出处
期刊:Synthetic Metals [Elsevier]
卷期号:225: 55-63 被引量:9
标识
DOI:10.1016/j.synthmet.2017.01.007
摘要

Organic polymer thermoelectrics (TE) as well as transition metal (TM) silicides are two thermoelectric class of materials of interest because they are composed of atomic elements of high abundance; which is a prerequisite for mass implementation of thermoelectric (TE) solutions for solar and waste heat recovery. But both materials have drawbacks when it comes to finding low-cost manufacturing. The metal silicide needs high temperature (>1000 °C) for creating TE legs in a device from solid powder, but it is easy to achieve long TE legs in this case. On the contrary, organic TEs are synthesized at low temperature from solution. However, it is difficult to form long legs or thick films because of their low solubility. In this work, we propose a novel method for the room temperature synthesis of TE composite containing the microparticles of chromium disilicide; CrSi2 (inorganic filler) in an organic matrix of nanofibrillated cellulose- poly(3,4-ethyelenedioxythiophene)-polystyrene sulfonate (NFC-PEDOT:PSS). With this method, it is easy to create long TE legs in a room temperature process. The originality of the approach is the use of conducting polymer aerogel microparticles mixed with CrSi2 microparticles to obtain a composite solid at room temperature under pressure. We foresee that the method can be scaled up to fabricate and pattern TE modules. The composite has an electrical conductivity (σ) of 5.4 ± 0.5 S/cm and the Seebeck coefficient (α) of 88 ± 9 μV/K, power factor (α2σ) of 4 ± 1 μWm−1K−2 at room temperature. At a temperature difference of 32 °C, the output power/unit area drawn across the load, with the resistance same as the internal resistance of the device is 0.6 ± 0.1 μW/cm2.
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