材料科学
钙钛矿(结构)
表征(材料科学)
工程物理
纳米技术
光电子学
化学工程
物理
工程类
作者
Lea Zimmermann,Dorothee Menzel,Richard Gundermann,Maxim Simmonds,Florian Scheler,Thomas W. Gries,Edgar R. Nandayapa,Andres Felipe Castro Mendez,Florian Mathies,Aleksandra Miaskiewicz,Emil List,Philippe Holzhey,Artem Musiienko,Felix Lang,Lars Korte,Eike Köhnen,Steve Albrecht
标识
DOI:10.1002/aenm.202501225
摘要
Abstract C 60 is the prevalent electron‐transport layer (ETL) in high‐efficiency p‐i‐n perovskite single‐junction and multi‐junction solar cells. Here, it is demonstrated that the exposure of the C 60 ETL to ambient O 2 results in significantly increased non‐radiative recombination, influencing results from commonly applied characterization techniques such as steady‐state and transient photoluminescence (PL), transient surface photovoltage, as well as current density‐voltage measurements. Based on PL and He‐I UV photoemission spectroscopy measurements and supported by density functional theory calculations and drift‐diffusion simulations, it is proposed that O 2 rapidly intercalates into the C 60 ETL, causing the formation of deep trap states and an altered charge carrier balance at the perovskite/C 60 interface. The findings reveal that the effect is reversible but can mislead experimental interpretations if disregarded, emphasizing the importance of O 2 management during device fabrication and characterization. Furthermore, it is demonstrated that this interaction enables simple PL measurements in air to serve as a novel sensing method for evaluating the barrier layer quality of the SnO x buffer layer atop C 60 . This study thereby not only highlights a critical deterioration mechanism in perovskite solar cells and provides a deeper understanding of the underlying interaction between the C 60 ETL and O 2 but also offers practical avenues for future selective contact optimizations.
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