光电探测器
异质结
材料科学
光电子学
响应度
钝化
光电导性
纳米技术
范德瓦尔斯力
图层(电子)
物理
分子
量子力学
作者
Yingying Niu,Xin Zhou,Wei Gao,Maixia Fu,Yule Duan,Jiandong Yao,Bing Wang,Mengmeng Yang,Zhaoqiang Zheng,Jingbo Li
出处
期刊:ACS Nano
[American Chemical Society]
日期:2023-07-10
卷期号:17 (14): 13760-13768
被引量:7
标识
DOI:10.1021/acsnano.3c03319
摘要
Driven by the rapid development of autonomous vehicles, ultrasensitive photodetectors with high signal-to-noise ratio and ultraweak light detection capability are urgently needed. Due to its intriguing attributes, the emerging van der Waals material, indium selenide (In2Se3), has attracted extensive attention as an ultrasensitive photoactive material. However, the lack of an effective photoconductive gain mechanism in individual In2Se3 inhibits its further application. Herein, we propose a heterostructure photodetector consisting of an In2Se3 photoactive channel, a hexagonal boron nitride (h-BN) passivation layer, and a CsPb(Br/I)3 quantum dot gain layer. This device manifests a signal-to-noise ratio of 2 × 106 with responsivity of 2994 A/W and detectivity of 4.3 × 1014 Jones. Especially, it enables the detection of weak light as low as 0.03 μW/cm2. These performance characteristics are ascribed to the interfacial engineering. In2Se3 and CsPb(Br/I)3 with type-II band alignment promote the separation of photocarriers, while h-BN passivates the impurities on CsPb(Br/I)3 and promises a high-quality carrier transport interface. Furthermore, this device is successfully integrated into an automatic obstacle avoidance system, demonstrating promising application prospects in autonomous vehicles.
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