Effect of different scattering mechanisms on the low field transport in wide band-Gap SiC

Aim Theoretical calculation of the electron Hall mobility and the Hall scattering factor in 4H-and 6H-SiC is performed.Methods The modified low-field transport model utilizing isotropic relaxation time approximation is used.The acoustic phonon deformation potential scattering,polar optical phonon scattering,intervalley phonon deformation scattering,ionized impurity scattering and neutral impurity scattering which have an important effect on low field transport in SiC are considered simultaneously.Results The impact of different scattering mechanisms on the electron Hall mobility is obtained.Conclusion The electron Hall mobility is mainly controlled by neutral impurity scattering at low temperature and high doping concentration.But the intervalley phonon deformation scattering is the main factor for high temperature.