Investigation of the mechanism for current induced network failure for spray deposited silver nanowires

Silver nanowires are one of the prominent candidates for the replacement of the incumbent indium tin oxide in thin and flexible electronics applications. Their main drawback is their inferior electrical robustness. Here, the mechanism of the short duration direct current induced failure in large networks is investigated by current stress tests and by examining the morphology of failures. It is found that the failures are due to the heating of the film and they initiate at the nanowire junctions, indicating that the main failure mechanism is based on the Joule heating of the junctions. This failure mechanism is different than what has been seen in literature for single nanowires and sparse networks. In addition, finite element heating simulations are performed to support the findings. Finally, we suggest ways of improving these films, in order to make them more suitable for device applications.