光学
绝缘体上的硅
光开关
宽带
材料科学
光电子学
干涉测量
功率分配器和定向耦合器
极化(电化学)
光子学
硅
横截面
插入损耗
硅光子学
马赫-曾德尔干涉仪
消光比
物理
波长
物理化学
化学
工程类
结构工程
作者
Huizhan Yang,Yunxin Kuan,Tuowen Xiang,Yuntao Zhu,Xinlun Cai,Liu Liu
出处
期刊:Optics Express
[Optica Publishing Group]
日期:2018-05-22
卷期号:26 (11): 14340-14340
被引量:40
摘要
A novel configuration for realizing a polarization-insensitive optical switch on silicon-on-insulator of 340nm-thick top-silicon layer is demonstrated, using submicron sized waveguides. The device is based on the Mach-Zehnder interferometer structure. By carefully designing the 3dB couplers and the delay-line waveguides in the device, it is possible to achieve a similar switching behavior for all polarizations. Theoretical analyses indicate that extinction ratios of better than -25dB and insertion losses of better than -0.6dB can be obtained simultaneously for transverse-electric and transverse magnetic polarized modes in the whole C-band. Experimental results also confirm the polarization-insensitive property of the proposed optical switch. Extinction ratios of about -15dB are measured for both polarizations.
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