Activation Energy for the Post Implantation Annealing of 10<sup>19</sup> cm<sup>-3</sup> and 10<sup>20 </sup>cm<sup>-3</sup> Ion Implanted Al in 4H SiC

The activation energy for the electrical activation of 1x10 19 cm -3 and of 1x10 20 cm -3 ion implanted Al in 4H-SiC has been estimated. Ion implantation temperature and dose rate were in the range 430-500°C and around 10 1 1 cm 2 s -1 , respectively. Post implantation annealing temperatures varied between 1500 °C and 1950 °C. The annealing time per each annealing temperature was sufficiently long that the sheet resistance of the implanted layer could be equal to the stationary value at the applied annealing temperature. The Arrhenius plots of the room temperature sheet resistances with respect to the post implantation annealing temperatures featured an exponential trend for both the implanted Al concentrations. The activation energies of these plots are the activation energy for placing an implanted Al atom in a substitutional site, i.e. the electrical activation energy. Activation energies around 1 eV, equal within errors for the two implanted Al concentrations, were found.