Growth of Microcrystalline Si Thin Film of Solar Cell by Using Novel High Density Remote Plasma PECVD

The heterojunction with intrinsic thin (HIT) layer solar cell has a very thin emitter layer on the lightincident surface (about 10nm) and the contact region was passivated to improve solar cell performance. Based on the experiment results, by using optimization of post-anneal H2 treatment for the HIT device, the Von improved from 0.2 V to near 0.6 V and the reversed dark current density (Ioff) was kept very low (10-9 A/cm2). With the double side design of HIT device, the efficiency was increased from 3.67% to 8.05%. These results indicate that the surface properties of these HIT devices were well controlled and exhibit a solar cell performance well.