Insight into the Impact of Trap and Hydrogen on the PBTI in IGZO TFT by 3D KMC

This work investigates PBTI in IGZO TFTs using a 3D KMC framework capturing trap- and hydrogen-related mechanisms. Two coupled pathways are identified: charge trapping/detrapping in the dielectric and hydrogen diffusion-reaction in the channel. Hydrogen accumulates at the interface before diffusing into the channel, reacting with metal atoms or oxygen vacancies to generate defects and release carriers. The framework reproduces thickness-dependent degradation and elucidates the roles of hydrogen precursor and reactive site densities in PBTI optimization. Variability analysis shows trap-induced degradation follows defect-centric statistics while hydrogen-induced degradation exhibits Gaussian behavior.