过程(计算)
扩散
热的
计算机科学
扩散过程
流量(数学)
工艺工程
机械
热力学
工程类
物理
知识管理
操作系统
创新扩散
标识
DOI:10.1109/rtp.2002.1039434
摘要
For characterizing the susceptibility of processes or process flows for diffusion effects, usually the term "thermal budget" (TB) is used. However, even though there are several definitions of the TB, still no quantitative and manageable description of the TB of several consecutive process steps exists due to the Arrhenius-nature of diffusion processes. This paper presents an analytical approach to quantify the TB of a given CMOS process flow based on the shift of a pn-junction due to thermal process steps. Furthermore, classification numbers for each process step were introduced which allow one to rate their significance with regard to the TB. In conjunction with a device specification-dependent diffusion limit, it is then possible to determine the remaining temperature-time-window at each stage of the process flow.
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