Novel Tunneling Field-Effect Transistor with Sigma-Shape Embedded SiGe Sources and Recessed Channel

A novel tunneling field-effect transistor (TFET) featuring the sigma-shape embedded SiGe sources and recessed channel is proposed. The gate facing the source effectively focuses the E-field at the tip of the source and eliminates the gradual turn-on issue of planar TFETs. The fabrication scheme modified from the state-of-the-art 45nm/32nm CMOS technology flows provides a unique benefit in the co-integrability and the control of ID-VGS characteristics. The feasibility is verified with TCAD process simulation of the device with 14nm of the gate dimension. The device simulation shows 5-order change in the drain current with a gate bias change less than 300mV.