7.3: Influence of Layer Thickness on the Performance of Quantum Dots Light Emitting Devices

Abstract The large area quantum dots light diode assays were fabricated by using CdSe/ZnS core/shell quantum dots (QDs) as light emitting layer, ZnO nanoparticles (NPs) as an electron transport/injection layer (ETL) and organic polymers as hole transport layer (HTL). The performance of the device was measured for samples of different thicknesses of QDs layer. By optimizing the constituent layers thicknesses, light emitting diode arrays (10 cm×10 cm active area, 32×32 pixel) were fabricated with improved electroluminance efficiency (1 to 1.8 Cd/A), low turn‐on voltages (3.2 V) and pure QDs emission. These findings suggest that such simple tuning techniques in these LEDs will be promising for use in practical flat panel displays (FPDs).