Leomar S. da Rosa,Felipe Marques,Tiago Muller Gil Cardoso,Renato P. Ribas,Sachin S. Sapatnekar,André I. Reis
标识
DOI:10.1145/1150343.1150381
摘要
In this paper, we describe different ways to derive transistor networks from BDDs. The use of disjoint pull-up (composed of PMOS transistors) and pull-down (composed of NMOS transistors) planes allows simplifications that result in shorter pull-up and pull-down transistor stacks. The reduced length of transistor stacks leads to the fastest implementation among the six different strategies evaluated to generate transistor networks from BDDs. Delay and area results are presented showing the impact of the proposed strategy.