Numerical simulation of metal interconnects of power semiconductor devices

This paper presents a methodology and a software tool – R3D – for extraction, simulations, analysis, and optimization of metal interconnects of power semiconductor devices. This tool allows an automated calculation of large area device Rdson value, to analyze current density and potential distributions, to design sense device, and to optimize a layout to achieve a balanced and optimal design. R3D helps to reduce the probability of a layout error, and drastically speeds up and improves the quality of layout design.