ZnS Optoelectronic Synapses with Tunable Volatile and Nonvolatile Resistive Switching for Neuromorphic Learning

), thus functioning as integrated selector and memristor. The device realizes multilevel memory and effectively emulates diverse biological synaptic plasticity behaviors under electrical or near-infrared (808 and 980 nm) light stimulation, while also reproducing the brain-like Ebbinghaus "learning-forgetting-consolidation" rules. This work holds scientific significance for advancing the potential of devices with self-suppressing sneak current functionality in brain-inspired neuromorphic computing systems.