拉普拉斯变换
热弹性阻尼
半导体
激光器
磁场
拉普拉斯逆变换
机械
电子
材料科学
计算物理学
物理
热的
光学
光电子学
数学分析
数学
量子力学
热力学
作者
Nidhal Becheikh,Nejib Ghazouani,Alaa A. El‐Bary,Kh. Lotfy
出处
期刊:Crystals
[Multidisciplinary Digital Publishing Institute]
日期:2023-04-12
卷期号:13 (4): 665-665
被引量:4
标识
DOI:10.3390/cryst13040665
摘要
In the present work, the interaction between electrons and holes in semiconductor materials is investigated. According to the excitation process, the optical-elastic-thermal-diffusion (OETD) process is considered when the medium is exposed to a strong magnetic field and laser pulses. Photo-elastic and photo-electronics deformations are taken into account when the Hall current impact appears due to the magnetic field pressure on the semiconductor medium. Due to the complexity of the model, the governing equations that describe the system in one dimension (1D) are studied. Mathematical transformations (Laplace transform) were used to simplify the equations to obtain the physical quantities under study which were affected by laser pulses. To obtain complete solutions, some conditions were obtained from the free surface as well as from a mechanical ramp type and pulse heat flux, and then numerical transformations were applied using the inverse Laplace transform. Under the influence of several variables in this question, the results were explained graphically for silicon (Si) material and the results were analyzed in terms of their physical significance.
科研通智能强力驱动
Strongly Powered by AbleSci AI