Solar-blind photodetectors with beta-Ga2O3/Si(111) layers, grown by pulsed lased deposition

Growth of (2̄01)-oriented β-Ga₂O₃ directly on epi-ready Si (111) substrates, by pulsed laser deposition (PLD), and the performance metrics of metal-semiconductor-metal (MSM) photodetectors with asymmetric Schottkey contacts, realized with these oxide films, is investigated here. We demonstrate that the best crystalline quality of the as-deposited films, which is predominantly of the monoclinic phase, is obtained for deposition in an Argon rich ambient, at a substrate temperature of 750°C. The peak responsivity of the MSM photodetectors in the solar-blind region is measured to be as high as 3A/W, at a bias voltage as low as 500mV. Therefore, the obtained results bode extremely well for monolithic integration of such detectors to the CMOS platform.